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PHOTODIODE
GaAsP photodiode
Diffusion type
Photodiode for visible light detection
Features Applications
l Low dark current l High stability
l Analytical instrument l Color identification
s General ratings / Absolute maximum ratings
Type No. Dimensional outline/ Window material * /K /K /K /R /R /L /R Package Active area size (mm) 1.3 x 1.3 2.7 x 2.7 5.6 x 5.6 1.3 x 1.3 5.6 x 5.6 1.3 x 1.3 1.3 x 1.3 Effective active area (mm2) 1.66 7.26 29.3 1.66 29.3 1.66 1.66 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (C) (C)
G1115 G1116 G1117 G1118 G1120 G3067 G2711-01
TO-18 TO-5 TO-8 Ceramic Ceramic TO-18 Plastic
5
-30 to +80
-40 to +85
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Spectral Peak response sensitivity range wavelength p (nm) G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 (nm) Photo sensitivity S (A/W) p GaP LED 560 nm Terminal Temp. Dark Short circuit Rise time capacitance coefficient current current tr of Ct Isc ID VR=0 V ID VR=0 V Max. x RL=1 k He-Ne 100 l TCID f=10 kHz laser Min. Typ. V4=10 mV V4=1 V 633 nm (A) (A) (pA) (pA) (times/C) (s) (pF) 1 300 0.12 0.15 1 10 4 1400 0.45 0.6 2.5 25 15 6000 2 2.5 5 50 1 300 0.29 0.12 0.15 1 10 1.07 15 6000 2 2.5 5 50 1 300 0.75 0.95 1 10 1 300 0.15 0.18 1 10 Shunt resistance Rsh VR=10 mV NEP
Type No.
300 to 680 640
0.3
0.29
Min. Typ. (G) (G) (W/Hz1/2) 10 80 1.5 x 10-15 4 30 2.5 x 10-15 2 15 3.5 x 10-15 10 80 1.5 x 10-15 2 15 3.5 x 10-15 10 80 1.5 x 10-15 10 80 1.5 x 10-15
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
GaAsP photodiode
sSpectral response
0.5 (Typ. Ta=25 C)
+1.5
Diffusion type
(Typ.)
sPhoto sensitivity temperature characteristic
TEMPERATURE COEFFICIENT (%/C)
PHOTO SENSITIVITY (A/W)
0.4
+1.0
0.3
+0.5
0.2
0.1
0
0 200
400
600
800
-0.5 200
400
600
800
WAVELENGTH (nm)
KGPDB0019EA
WAVELENGTH (nm)
KGPDB0020EA
sRise time vs. load resistance
10 ms G1117, G1120 1 ms G1116 100 s (Typ. Ta=25 C, VR=0 V)
sDark current vs. reverse voltage
1 nA (Typ. Ta=25 C)
100 pA
DARK CURRENT
RISE TIME
G1117, G1120 10 pA G1116
10 s
G1115, G1118 G3067, G2711-01
1 pA
1 s
G1115, G1118 G2711-01, G3067
100 ns 2 10
10
3
10
4
10
5
10
6
100 fA 0.001
0.01
0.1
1
10
LOAD RESISTANCE ()
KGPDB0021EA
REVERSE VOLTAGE (V)
KGPDB0022EA
sShunt resistance vs. ambient temperature
(Typ. VR=10 mV) 10 T G1115, G1118 G3067, G2711-01 1 T
sShort circuit current linearity
100 10-2 (Typ. Ta=25 C, A light source fully illuminated)
RL=100
OUTPUT CURRENT (A)
SHUNT RESISTANCE
G1116 100 G
10
-4
10-6 10-8 10
-10
10 G
1 G
G1117, G1120
10-12 10-14
100 M
10 M -20
0
20
40
60
80
Refer to NEP value in characteristic table. 10-16 -16 -14 -12 -10 -8 -6 -4 -2 0 10 10 10 10 10 10 10 10 10
AMBIENT TEMPERATURE (C)
KGPDB0023EA
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
GaAsP photodiode
sDimensional outlines (unit: mm) G1115
WINDOW 3.0 0.2 5.4 0.2
3.55 0.2
Diffusion type
G1116
9.1 0.2
PHOTOSENSITIVE SURFACE 0.45 LEAD
PHOTOSENSITIVE SURFACE 0.45 LEAD
2.4
2.9
5.08 0.2 Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap.
2.54 0.2
CONNECTED TO CASE Borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap.
14
CONNECTED TO CASE
KGPDA0012EA
20
4.1 0.2
4.7 0.1
WINDOW 5.9 0.1
8.1 0.1
KGPDA0013EA
G1117
13.9 0.2
5.0 0.2
G1118
CATHODE TERMINAL MARK 6.0 0.2 ACTIVE AREA
5.0 0.2
WINDOW 10.5 0.1
12.35 0.1
PHOTOSENSITIVE SURFACE
7.5 0.2 MARK ( 1.4)
0.6
0.45 LEAD 3.0 0.2
CONNECTED TO CASE
Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap.
KGPDA0014EA
14
1.5 0.2
PHOTOSENSITIVE SURFACE 0.45 LEAD
1.9
15
KGPDA0002EA
GaAsP photodiode
Diffusion type
G1120
10.1 0.1
G3067
5.4 0.2 4.65 0.1
8.9 0.1
ACTIVE AREA
PHOTOSENSITIVE SURFACE
2.0 0.1
0.3
0.65
0.45 LEAD
10.5
0.5 LEAD 9.2 0.3 7.4 0.2 ANODE TERMINAL MARK
2.54 0.2
8.0 0.3
CONNECTED TO CASE
Coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package.
KGPDA0008EA
14
4.5 0.2
2.4
2.15 0.3
KGPDA0009EA
G2711-01
4.6 0.2 (INCLUDING BURR)
5.6 0.2 (INCLUDING BURR) 5.4
0.7 0.5 2.54
2.0 ANODE CATHODE NC CATHODE
10
4.5 5.75 0.2 5
0.6 1.0 PHOTOSENSITIVE SURFACE
4.5 0.4
3
0.25
7.5 5
KGPDA0003EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
3
5.5
Cat. No. KGPD1002E01 Apr. 2001 DN

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